w w w w b b b b r r r r 13005d1 13005d1 13005d1 13005d1 c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . high high high high voltage voltage voltage voltage fast-switching fast-switching fast-switching fast-switching npn npn npn npn power power power power transistor transistor transistor transistor features v e r y h i g h s w it c h i n g s p e e d minimum lot-to-lot h fe variation w ide re v e r se bias soa b u ilt-in free w he e l i n g d i o de general description t h is device is des i gn e d for h i gh volt a ge, h ig h spe e d s w it c h i n g cha r acteristics re qu ired su c h as li g hting s y stem, s w it c h i n g m o d e p o w e r s u p p l y. absolute maximum ratings s y mbol par a met e r t es t condi t i o ns v a lue units v ces collector-emitter voltage v be = 0 700 v v ceo collector-emitter voltage i b = 0 400 v v ebo emitter-base v o lta g e i c = 0 9 .0 v i c col l ector cur re n t 4.0 a i cp col l ector p u lse current 8.0 a i b base cur r ent 2.0 a i bm base peak c u r rent t p = 5ms 4.0 a p c t o tal dissipat i on at t c = 25 40 w t o tal dissipat i on at t a = 2 5 1.8 t j operati o n jun c tion t e mperat u re - 40 ~ 150 t s t g storage t e mperature - 40 ~ 150 t c : case tem p e r ature ( g ood cooling) t a: ambient t e m peratu r e ( w ithout heat sink) thermal chara c teri s tics s y mbol par a met e r v alue units r jc t hermal resis t ance j u ncti o n to case 1.67 /w r ja t hermal resis t ance j u ncti o n to ambi e n t 62.5 /w jan 20 12 . rev. 0
w w w w b b b b r r r r 13005d1 13005d1 13005d1 13005d1 2 / 4 . steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electrical characteristics (t c =25 u n less other w i se n oted) s y mbol par a met e r t es t condi t i o ns v a lue units min t y p max i cev col l etor cut-off current ( vbe = -1.5v ) v ce = 700v v ce = 700v , t c = 10 0 - - - - 1.0 5.0 ma v ceo(sus) col l ector-emitter susta i ni n g v o lta g e ib = 0, ic = 10ma 400 - - v v ce(sat) collector-emitter s a turation voltage i c =1.0a, i b = 0.2a i c = 2.0a, i b = 0.5a i c = 4.0a, i b = 1.0a - - 0.5 0.6 1.0 v v be(sat) base-emitter s a t u r a tion v o lta g e i c =1.0a, i b = 0.2a i c = 2.0a, i b = 0.5a - - 1.2 1.6 v h fe dc curr e nt gain i c = 1.0a, vce = 5v ic = 2.0a, vce = 5v 10 10 40 30 ts tf storage t ime fall t ime i c = 2.0a, v cc = 125v i b1 = 0.4a, i b2 = -0.4a t p = 25us - - 3.6 1.6 ? f t current ga i n ban d w i dth p r o d uct i c =0.5a ,v ce = 1 0 v 4 - - mhz v f dio d e fo r w a r d voltage i f = 2 a - - 2.5 v c ob output ca p a ci t ance i c =0.5a ,v ce = 1 0 v - 6.5 pf note: note: note: note: pulse test : pulse width 300, duty c y cle 2%
w w w w b b b b r r r r 13005d1 13005d1 13005d1 13005d1 3 / 4 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig. fig. fig. fig. 1 1 1 1 dc dc dc dc c c c c u u u u rr rr rr rr ent ent ent ent gain gain gain gain fig. fig. fig. fig. 2 2 2 2 sa sa sa sa t t t t u u u u r r r r a a a a t t t t ion ion ion ion vol vol vol vol t t t t a a a a g g g g e e e e fig. fig. fig. fig. 3 3 3 3 po po po po w w w w er er er er de de de de r r r r a a a a t t t t ing ing ing ing fig. fig. fig. fig. 4 4 4 4 safe safe safe safe op op op op er er er er a a a a t t t t ion ion ion ion a a a a r r r r ea ea ea ea fig. fig. fig. fig. 5 5 5 5 collect collect collect collect output output output output ca ca ca ca p p p p acitance acitance acitance acitance
4 / 4 . w w w w b b b b r r r r 13005d1 13005d1 13005d1 13005d1 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance t t t t o- o- o- o- 126 126 126 126 packa packa packa packa g g g g e e e e dimension dimension dimension dimension unit:mm
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